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LHF32KZM
6.2.8 BLOCK ERASE, FULL CHIP ERASE, (MULTI) WORD/BYTE WRITE AND BLOCK
LOCK-BIT CONFIGURATION PERFORMANCE (3)
V CC =2.7V-3.6V, T A =-40°C to +85°C
45
Typ.
Max.
Sym.
Parameter
Notes
V PP =2.7V-3.6V
(1)
V PP =3.0V-3.6V
Typ. (1) Max.
V PP =4.5V-5.5V
Typ. (1) Max.
Unit
t WHQV1
t EHQV1
t WHQV1
t EHQV1
Word/Byte Write Time
(using W/B write, in word
mode)
Word/Byte Write Time
(using W/B write, in byte
mode)
Word/Byte Write Time
(using multi word/byte write)
2
2
2
22.19
19.9
5.76
250
250
250
22.19
19.9
5.76
250
250
250
13.2
13.2
2.76
180
180
180
μs
μs
μs
Block Write Time
(using W/B write, in word
2
0.73
8.2
0.73
8.2
0.44
4.8
s
mode)
Block Write Time
(using W/B write, in byte
2
1.31
16.5
1.31
16.5
0.87
10.9
s
mode)
Block Write Time
(using multi word/byte write)
2
0.37
4.1
0.37
4.1
0.18
2
s
t WHQV2
t EHQV2
t WHQV3
t EHQV3
t WHQV4
t EHQV4
t WHRH1
t EHRH1
t WHRH2
t EHRH2
Block Erase Time
Full Chip Erase Time
Set Block Lock-Bit Time
Clear Block Lock-Bits Time
Write Suspend Latency Time
to Read
Erase Suspend Latency
Time to Read
2
2
2
0.56
35.9
22.17
0.56
7.24
15.5
10
640
250
10
10.2
21.5
0.56
35.9
22.17
0.56
7.24
15.5
10
640
250
10
10.2
21.5
0.42
26.9
13.2
0.42
6.73
12.54
10
640
180
10
9.48
17.54
s
s
μs
s
μs
μs
NOTE:
See 3.3V V CC Block Erase, Full Chip Erase, (Multi) Word/Byte Write and Block Lock-Bit Configuration Performance
for notes 1 through 3.
Rev. 1.6
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